MDD142-18N1 phase leg standard rectifier module 2 1 3 part number MDD142-18N1 backside: isolated fav f v v 1.05 rrm 165 1800 = v = v i = a 2x features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for single and three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors y4 industry standard outline rohs compliant soldering pins for pcb mounting base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MDD142-18N1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.12 r 0.21 k/w r min. 165 v rsm v 1 t = 25c vj t = c vj ma 20 v = v r t = 25c vj i = a f v t = c c 100 p tot 600 w t = 25c c r k/w 150 1800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.30 t = 25c vj 150 v f0 v 0.80 t = c vj 150 r f 1.3 m ? v 1.05 t = c vj i = a f v 150 1.26 i = a f 300 i = a f 300 threshold voltage slope resistance for power loss calculation only ma 125 v rrm v 1800 max. repetitive reverse blocking voltage t = 25c vj i a 300 c j 238 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 4.70 5.08 79.8 77.5 ka ka ka ka 4.00 4.32 110.5 107.1 1800 rms forward current f(rms) fav 180 sine average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1900 0.08 ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MDD142-18N1 ratings part number yywwaa date code (dc) + production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit package t op c m d nm 2.75 mounting torque 2.25 t vj c 150 virtual junction temperature -40 weight g 150 symbol definition typ. max. min. conditions operation temperature unit m t nm 5.5 terminal torque 4.5 v v t = 1 second v t = 1 minute isolation voltage mm mm 14.0 10.0 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 300 a per terminal 125 -40 terminal to terminal y4 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MDD142-18N1 454435 box 6 MDD142-18N1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 0.7 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MDD142-18N1 2 1 3 outlines y4 ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MDD142-18N1 6000 5000 4000 3000 2000 1000 0 10 -3 10 -2 10 -1 10 0 10 1 t [s] i fsm [s] 50 hz, 80%v rrm t vj = 45c t vj = 150c fig. 1 surge overload current i fsm : crest value, t: duration 10 6 10 5 10 4 t vj = 150c t vj = 45c v r = 0 v i 2 dt [a 2 s] 1 2 4 6 8 10 t [s] fig. 2 ?i i 2 dt versus time (1-10 ms) 50 0 100 150 200 t c [c] 100 200 300 400 i favm [a] dc 180 sin. 120 rect. 60 rect. 30 rect. dc 180 sin. 120 rect. 60 rect. 30 rect. r thja [k/w] 0.4 0.5 0.6 0.8 1.0 1.2 1.5 2.0 300 400 200 100 0 0 p t [w] t a [c] t favm [a] 0 100 50 150 200 250 300 0 50 100 150 200 r thja [k/w] 0.06 0.08 0.10 0.15 0.20 0.30 0.40 0.50 circuit b2 2x mdd142 0 0 100 200 300 400 0 100 150 200 50 t davm [a] t a [c] p t [w] 200 400 600 800 1000 1200 r l fig. 2a maximum forward current at case temperature fig. 3 power dissipation vs. forward current and ambi ent temperature (per diode) fig. 4 single phase rectifier bridge: power dissipat ion vs. direct output current and ambient r = resistive load l = inductive load rectifier ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MDD142-18N1 r thka [k/w] 0.03 0.06 0.08 0.12 0.15 0.02 0.30 0.50 1500 2000 1000 500 0 p tot [w] t a [c] t favm [a] 0 200 100 300 400 500 0 50 100 150 200 fig. 5 three phase rectifier bridge: power dissipatio n vs. direct output current and ambient te mperature circuit b6 2x mdd142 30 60 120 180 dc z thjc [k/w] t [s] 0.3 0.25 0.2 0.15 0.1 0.05 0 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 30 60 120 180 dc 10 3 10 4 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 0.1 0.2 0.3 0.4 z thjk [k/w] t [s] fig. 6 transient thermal impedance junction to case (per diode) fig . 7 t r ansient the r mal impedance junction to heatsink (per diode) r thjc for various conduction angles d: d r thjc [k/w] dc 0.210 180 0.223 120 0.233 60 0.260 30 0.295 constants for z thjc calculation: i r thi [k/w] t i [s] 1 0.0087 0.001 2 0.0163 0.065 3 0.1850 0.400 r thjk for various conduction angles d: d r thjk [k/w] dc 0.310 180 0.323 120 0.333 60 0.360 30 0.395 constants for z thjk calculation: i r thi [k/w] t i [s] 1 0.0087 0.001 2 0.0163 0.065 3 0.1850 0.400 4 0.1000 1.290 rectifier ixys reserves the right to change limits, condition s and dimensions. 20160408c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
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